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QS5U13
Transistors
Electrical characteristic curves
<MOSFET>
10
1
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
V DS = 10V
Pulsed
1000
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
V GS = 4.5V
Pulsed
1000
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
V GS = 4.0V
Pulsed
0.1
0.01
100
100
0.001
0.0
0.5
1.0
1.5
2.0
2.5
10
0.1
1
10
10
0.1
1
10
GATE-SOURCE VOLTAGE : V GS (V)
Fig.1 Typical Transfer Characteristics
DRAIN CURRENT : I D (A)
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current
DRAIN CURRENT : I D (A)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
1000
V GS = 2.5V
300
Ta = 25 ° C
1000
Ta = 25 ° C
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
Pulsed
200
I D = 2A
Pulsed
V GS = 2.5V
V GS = 4V
V GS = 4.5V
Pulsed
100
100
I D = 1A
100
10
0.1
1
10
0
0
1
2
3
4
5
6
7
8
9
10
10
0.1
1
10
DRAIN CURRENT : I D (A)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current
GATE-SOURCE VOLTAGE : V GS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
DRAIN CURRENT : I D (A)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
10
1
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
V GS = 0V
Pulsed
1000
Ta = 25 ° C
f = 1MHz
V GS = 0V
1000
100
t f
Ta = 25 ° C
V DD = 15V
V GS = 4.5V
R G = 10 ?
Pulsed
C iss
100
t d (off)
0.1
C oss
C rss
10
t d (on)
t r
0.01
0.0
0.5
1.0
1.5
10
0.01
0.1
1
10
100
1
0.01
0.1
1
10
SOURCE-DRAIN VOLTAGE : V SD (V)
Fig.7 Reverse Drain Current
vs. Source-Drain Current
DRAIN-SOURCE VOLTAGE : V DS (V)
Fig.8 Typical Capacitance
vs. Drain-Source Voltage
DRAIN CURRENT : I D (A)
Fig.9 Switching Characteristics
Rev.A
3/4
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